Advanced Electronic Materials _ Inside Front Cover

Volume 8, Issue 11

November 2022

Oxygen-Scavenging Effects of Added Ti Layer in the TiN Gate of 

Metal-Ferroelectric-Insulator-Semiconductor Capacitor with Al-Doped HfO₂ Ferroelectric Film 

(Adv. Electron. Mater. 11/2022)

Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee,

 Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park, Cheol Seong Hwang

https://onlinelibrary.wiley.com/doi/10.1002/aelm.202270056

Image created by Younghee Lee / CUBE3D Graphic.